| SHKSI1S205 |
Si wafer <100> Dia.2”x0.5mm |
Intrinsic, R:>10,000 ohm-cm, One side polished |
25 |
Pc |
NT$27,500 |
|
|
| SHKSI1S0929 |
Si wafer <111> Dia. 2"x0.3mm |
undoped, R>= 10,000 ohm-cm, Double side polishe |
25 |
Pc |
NT$33,000 |
|
|
| SHKSI1S2"E |
Si wafer <100> Dia.2”x0.5mm |
Undoped, R: >5000 ohm-cm, Double side polished |
25 |
Pc |
NT$32,500 |
|
|
| SHKSI1S2"A |
Si wafer <111> Dia.2”x0.5mm |
Intrinsic, R:>10,000 ohm-cm, One side polished |
25 |
Pc |
NT$31,750 |
|
|
| SPRSI1S001 |
Si wafer <100> 4" |
P type, 1-10 ohm-cm, One side polished, Prime grad |
25 |
Pc |
NT$10,500 |
|
|
| SPRSI1S002 |
Si wafer <100> 4" |
N type, 1-10 ohm-cm, One side polished |
25 |
Pc |
NT$10,500 |
|
|
| SELSI1S0712 |
Si wafer <100> 4" |
P type, 0.001-0.005 ohm-cm, One side polished |
25 |
Pc |
NT$17,500 |
|
|
| SHKSI1S4"L |
Si wafer<100> Dia.4"x0.5 mm |
Undoped, R>10,000Ω.cm, One side polished |
25 |
Pc |
NT$72,500 |
|
|
| S0DSI1S8 |
Si wafer <100> 8" |
P type R: 1-30 ohm-cm, One side polished |
25 |
Pc |
NT$30,000 |
|
|