Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. Our product is the only material grown by ultra pure flux vapor technique which is free of halides and vacancy defects. The defect concentration is lower than 1E9cm-2 which is considered crystalline perfection limit. HfS2 crystals are designed and optimized last 10 years to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (6N), 99.9999%.